International Journal of Circuits, Systems and Signal Processing

   
E-ISSN: 1998-4464
Volume 15, 2021

Notice: As of 2014 and for the forthcoming years, the publication frequency/periodicity of NAUN Journals is adapted to the 'continuously updated' model. What this means is that instead of being separated into issues, new papers will be added on a continuous basis, allowing a more regular flow and shorter publication times. The papers will appear in reverse order, therefore the most recent one will be on top.

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Volume 15, 2021

Title of the Paper: Design of a Novel Current Mode Charge Pump for Very-Low-Voltage Applications in 130 nm SOI-BCD Technology

Authors:  Mounir Ouremchi, Karim El Khadiri, Ahmed Tahiri, Hassan Qjidaa

Pages: 461-469 

DOI: 10.46300/9106.2021.15.50     XML

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Abstract: A novel charge pump with current mode control suitable to work under a very-low-voltage supply is proposed in this paper. The proposed charge pump consists of two sections. The first section is a power switches stage which consists of seven cascaded DEPMOS power switches. The second section is a low voltage stage which consists of a Low Voltage Level Shifter, Current Mode control, Follower Amplifier, Error Amplifier, Soft Start Comparator, and Skip mode & Over Voltage Comparator. The charge pump has been designed, simulated, and layout in Cadence using TSMC 130 nm SOI technology with LDMOS transistors, which have very low on-resistance. The input range of the charge pump is 2.7– 4.4 V, and it can supply up to 100 mA load current. The maximum efficiency is 90%, and the chip area is only 0.597 mm².